euvlitho Vivek Summary 2015

<p>Jul 24, 2015 09:25 PM</p>

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This is &nbsp;Vivek Bakshi's Workshop Summary (compilation of key points from all

the talks)</p>

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Jul 24, 2015 09:26 PM &nbsp;conf was on Maui June 15 to 19 2015.</p>

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<b>Mark Philips &nbsp;Intel</b> &nbsp;(lead keynote:</p>

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EUVL for HVM &nbsp;: &nbsp;2 yrs of solid progress on source power</p>

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40 W tools... running as advertised &nbsp;(4 week demo)</p>

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since April 2015; &nbsp;3 tools > 80 W but availability and predictability still poor!</p>

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intro into a production is a Q of WHEN rather than IF

• availabil, stability and operating costs: still concerns...
  
• &nbsp;need to ensure infrastruc does not gate HVM.</p>

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APMI = Actinic Pattern Inspection</p>

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ASML is now commercializing pellicles. &nbsp;&nbsp;but defects in pellicles.

pellicles can withstand 250 W.</p>

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AMPI &nbsp;unlikely to be avaialble for HVM insertion. &nbsp;&nbsp;Will need much higher res &nbsp;DUV wafer inspection.

need to do 800 mm2 in 4 hours or less.</p>

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MASK infrastruc can GATE the insertion of EUV.. and will limit use of EUVL in HVM.</p>

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end Philips</p>

<p>

Challenges of EUV Litho &nbsp;HVM &nbsp;part 2 by

Takayuki Uchiyama of TOSHIBA...</p>

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rqmts for pilot production &nbsp;is &nbsp;> 100 W and &nbsp;> 75% availability

HVM needs &nbsp;> 250 W and > 95% avaialb and low defectivity for high yield.</p>

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ML = multilayer.</p>

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currently at 90 to 100 W at 55% availb.</p>

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RESIST challenges: &nbsp;paradigm shift to new platform for EUV resists

for current and high NA tools.</p>

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and he presents list of concerns for EUV-FEL to provide &nbsp;1000 W power

many challenges but no show stopper.</p>

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*

<b>Igor Fomenkov &nbsp;ASML - Cymer San Dieg</b>o</p>

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NXE tech roadmap &nbsp;NXE3300 &nbsp;from 80 to 250 watts &nbsp;at IF.</p>

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8 systems shipped; &nbsp;80 watts being transferred.

4th gen 3350B integration ong-going</p>

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3350 &nbsp;2X &nbsp;overlya improvement at 16 nm.</p>

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1000 wafers per day demo.</p>

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delivering > 100 W EUV power at mult &nbsp;UP2 systems.</p>

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key tech: &nbsp;optics protection, &nbsp;CO@ laser power.</p>

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CE &nbsp;(prob conversion efficiency) &nbsp;3.5% shipped &nbsp;&nbsp;16kW &nbsp;to &nbsp;80 to W dose.

4% in r and d; &nbsp;&nbsp;4.5% planned

5% &nbsp;demo.</p>

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collector lifetime of 0.1 terapulse at 80 W.</p>

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EUV RESISTS</p>

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Toru Fujimori &nbsp;EIDEC</p>

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<b>Negative tone imaging NTI, has a huge advantage</b> for improving LWR, (line width roughness)

&nbsp;due to low swelling and smooth dissolving behavior.

&nbsp;Example for 14 mJ LWR 3 nm vs 4.5 nm

new materials &nbsp;&nbsp;</p>

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