Intel, Micron Launch "Bulk-Switching" ReRAM
<p>Sep 06, 2015 05:09 PM</p>
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in (pre) production at wafer fab in Lehi Utah.
making 128 Gbit chips (two planes of 64 Gbit each) one bit per cell.</p>
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two separate products from eachof Intel and Micron.</p>
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unique material compounds...</p>
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similar to Crossbar Inc device... filamentary behavior. one or more filaments formed and broken.
but this is NOT filamentary. this is bulk-switching .</p>
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device architect is Shekoufeh Qawami... see pic.</p>
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scales in Z plane!</p>
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hundreds of engineers since 2012.</p>
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no need to collab with other companies.</p>
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compatible with BEOL (eg as embedded non-vol memory on cpu)</p>
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