2015 Extremetech Intel will adopt quantum wells, III-V semiconductors at 10nm node
<p>Apr 25, 2015 03:09 PM Extremetech article</p>
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article by Joel Hruska on 4/23/15</p>
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Extech based on analyst David kanter.</p>
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what will Intel do at 10 nm node => quantum well FETs and III-V semis.</p>
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take less power and offer higher clocks.</p>
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Kanter: prediction: InGaAs Indium Gallium Arsenide or InSb Indium Tin.</p>
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and strained germanium for p-type.</p>
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cut voltages to 0.5 volts.</p>
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reduce idle and low-use power.</p>
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power consumption rises as square or cube of voltage incr.</p>
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Q well => trap electrons</p>
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If Intel adopts these, it'll push back window on EUV to 7 nm.
push EUV intro back to 2018/2019</p>
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assuming 10 nm ships in 2016 to 2017.</p>
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