Intel IDF 2016 Shenzhen Intel Optane SSD
<p>Jan 20, 2017 04:15 PM Russ presents...</p>
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this is from Intel IDF: 16 first section: . talking about existing 3d NAND multilayer</p>
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starts with <b>3D NAND:.</b>... </p>
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floating gate memory tech: traps electrons; a cube of mem cells</p>
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4B pillars: each pillar has 32 layers... 3 bits of info at each memory cell (intersection)</p>
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384B bits of info on one die...</p>
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in the future stack more vertical layers, or more levels in each cell or closer together;</p>
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breakthru in cost and capacity; by 2017 </p>
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terabyte of info in a chip that is 1.5 mm thick chip for a notebook</p>
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<b>SSD up to 15 Tbytes </b> and a petabye in one server in a 19 inch rack!!! in one unit.</p>
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new non-vol tech....#D XPOINT </p>
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1000X faster than NAND; 1000X more durable than NAND and 10X density of DRAM;</p>
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3d but no transistors (unlike NAND); byte accessible;
cross point... vary voltage.... eliminate xsistors;
1000S faster than NAND... for system memory;
pattern recog; deep learn or genome seq; </p>
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Ian comes out to greet Russ;</p>
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contrasts NAND to thunderbolt 3; NAND SSD vs Optane 3d xpoint...</p>
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25 gigabytes; one minute vs 15 seconds for copy of data.; 4X as fast...</p>
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