How An EUV Light Source Works CYMER
<p>Jan 30, 2013 11:55 PM  Mike Lercel with CYMER
 
13.5 nm = lambda; compared to 193nm;
 
note transmission of light in the scanner from IF to wafer = T < 1% !!!
so, must have > 100 watts of power at the IF even in the introduc phase.
 
 
LPP   tin relatively efficient generator of EUV;  30 eV => 4d state;
droplet 30 micron  of tin
 
laser  produces tin ions
 
30 eV   13 nm light....
 
CO2 laser  10 micron... abt 20kwatts
 
10 micron light is focused down to 100 micron diffraction limited size;
 
target power is  100 watt for process development and
 
250 watt for HVM  (for > 100 wafers per hour)  their target
 
collector mirror: highly polished mirror...  selectively reflect at 13.5 nm...
 
 
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