ITRS 2012 Overview

<p>Nov 19, 2013 09:12 PM</p>

<p>

ITRS 2012 Overview &nbsp;76 pages &nbsp;pdf &nbsp;open access;</p>

<p>

Moore's Law &nbsp;(compoents per chip doubles every 24 months)</p>

<p>

most signif trend is decr cost per function => &nbsp;incr Qual of Life thru incr communications, etc.</p>

<p>

all called "scaling" &nbsp;enabled by large RD investments.</p>

<p>

ITRS first pub in 1999. &nbsp;preceded by &nbsp;NTRS in 1992.</p>

<p>

&nbsp;

MtM = More than Moore &nbsp;(since 07)

added value to end customer but in ways other than scaling.</p>

<p>

migrate non-digital functions &nbsp;eg &nbsp;RF communic, power control, passive compoents, sensors

actuators from board level to &nbsp;package level to chip level &nbsp;SoC.</p>

<p>

By 2020 it is hoped that we'll be able to augment CMOS with new devices... but

may also integrate WITH CMOS.</p>

<p>

innovations were initiated 10 to 15 years earlier before incorp into CMOS.

eg &nbsp;strained silicon began in early 90s; &nbsp;high K in mid-90s &nbsp;so...

what shud ITRS do NOW to extend industry in 10 to 15 years?</p>

<p>

As we look at 2020 to 2025 &nbsp;many physical dimensions cross 10 nm.</p>

<p>

Will be difficult to scale beyond 5 to 7 nm utilizing MOS physics.

but v promsing tunnel transistors will allow smooth transition to get to 5 to 7.

will need to go 3d

Key.. fundament Q is &nbsp;How to incr computation/ memory when device limits are reaced</p>

<p>

How to get more into in finite space.

Thrived on Boolean logic.

Use multiple &nbsp;(more than 2) lgoic states.

Magic of Quantum computing.

but short of that... perahps can incr to 4 to 10 states &nbsp;(incr virutal transistors &nbsp;by 2 every 2 years

(multiple states law)</p>

<p>

ITRS need to pay attn.

Consumers are real drivers... Custom functionality.</p>

<p>

ITRS consensus of experts from Europe, Japan, Korea, Taiwan and USA.</p>

<p>

see figure 1a &nbsp;Prodction RAMP curve; &nbsp;inflection at 24 months;</p>

<p>

fig 1b &nbsp;typical RAMP for III/V Hi mu &nbsp;channel

first tech device papers 12 years before product !

first incorpinto circuit 5 years before product.</p>

<p>

needs to involve new constituencies: &nbsp;eg &nbsp;health care, automotive, energy and lighting</p>

<p>

see figure 3: MtM update: &nbsp;automotive; &nbsp;lighting; &nbsp;energy; &nbsp;

health care: &nbsp;consumer, portable medical resords &nbsp;(sensing and MEMS)

good discussion: &nbsp;page 7;</p>

<p>

page 8: &nbsp;2012: &nbsp;transition to 450 mm;</p>

<p>

rationale: incr productivity.

want to get 30% cost reduc</p>

<p>

450 mm &nbsp;risk starts in 2016; &nbsp;HVM ramp in 2017/2018..</p>

<p>

Moore: synergistic benefit: &nbsp;shrinking dimensions +. decr voltage an dpower and incr speed.</p>

<p>

but voltage levels could no longer reduce.</p>

<p>

fig 6: &nbsp;half pitch defined in fig.</p>

<p>

page 18 &nbsp;EUV:</p>

<p>

page 31 MEMS &nbsp;acceleroms and gyros, microphones, &nbsp;RF mems

picoprojectors, electronic nose, microspeakers, and sono devices</p>

<p>

page 33 &nbsp;ERDs &nbsp;emerging devices: &nbsp;and ERM &nbsp;materials:</p>

<p>

&nbsp;</p>

<p>

&nbsp;</p>

<p>

&nbsp;

&nbsp;</p>