2009_ExecSum
<p>Sep 20, 2010 11:11 AM
 
see page 36   Emerging Research Devices
 
two tracks ...  extending CMOS  and Beyond CMOS.
 
could potentially use<b> particle spin </b>to perform non-volatile memory and logic functions on a CMOS chip, or could perform an information processing function utilizing spin waves.
Connecting these two scenarios, the 2009 ERD chapter features a particular emerging research information processing technology, <b>carbon-based nanoelectronics, which exhibits high potential and is maturing rapidly. </b>Carbon-based nanoelectronics, including carbon nanotubes, graphene, and graphene nanoribbons, was chosen because of its potential performance advantages when applied to MOSFETs and the rich physics it enables for realizing a new information processing device.
Several new research technologies are emerging for non-volatile random access memories offering potential for dense, high speed and lower power memory devices. Operation of most of these technologies is based on <b>employing a resistive element for storing binary data. Leading candidates include the Spin Transfer Torque RAM, the Nanothermal RAM (i.e., PCM and Fuse/Antifuse), and the Nanoionic RAM (i.e., Atomic Switch and Memristor). </b>Of particular interest are those technologies capable of being scaled to and beyond the 16 nm generation. Two other memory technologies, Nanocrystal Memory and Engineered Tunnel Barrier Memory, tracked and evaluated by ERD through several previous editions, have reached sufficient potential and maturity to be transferred to PIDS and FEP for their treatment in 2009.
 
also see  Architecture section... new memory architecture
see 3)  an example of a Bayesian inference network to illustrate merging one or more
Beyond CMOS devices to extend info processing (beyond limits of size scaling, power, and speed)
 
see page 42 LITHO
 
flash will be at 22 nm half-pitch in 2013...  must havd alternative NGL next gen lith to make smooth transition;
 
EUV is lead candidate for extesnion;  also maskless litho and imprint litho;
 
Difficult challenges < 22 nm
 
need brighter EUV sources...laser produced plasma
 
EUVL resist systems;  etc.   great article
 
 
 
 
 
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